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BLC9G20LS-470AVT - Power LDMOS transistor

Description

470 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation (1805 MHz to 1990 MHz).
  • Asymmetric design to achieve optimum efficiency across the band.
  • Lower output capacitance fo.

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Datasheet Details

Part number BLC9G20LS-470AVT
Manufacturer Ampleon
File Size 708.91 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC9G20LS-470AVT Datasheet
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Full PDF Text Transcription

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BLC9G20LS-470AVT Power LDMOS transistor Rev. 3 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 470 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 28 80 16 49 35 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. 1.
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