BLC9G22LS-120VT
BLC9G22LS-120VT is Power LDMOS transistor manufactured by Ampleon.
description
120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2180 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
IDq
VDS PL(AV) Gp
D
ACPR5M
(MHz)
(m A) (V) (W)
(d B) (%)
(d Bc)
2-carrier W-CDMA
2110 to 2180
700 28 30
18.1 31
- 32.5 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 d B at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
- Designed for broadband operation (1805 MHz to 1995 MHz)
- Lower output capacitance for improved performance...
