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BLF0910H9LS600 - Power LDMOS transistor

Datasheet Summary

Description

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Table 1.

Features

  • High efficiency.
  • Easy power control.
  • Excellent ruggedness.
  • Integrated ESD protection.
  • Designed for broadband operation (900 MHz to 930 MHz).
  • Internally input matched.
  • For RoHS compliance see the product details on the Ampleon website 1.3.

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Datasheet Details

Part number BLF0910H9LS600
Manufacturer Ampleon
File Size 1.09 MB
Description Power LDMOS transistor
Datasheet download datasheet BLF0910H9LS600 Datasheet
Additional preview pages of the BLF0910H9LS600 datasheet.

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Full PDF Text Transcription

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BLF0910H9LS600 Power LDMOS transistor Rev. 2 — 22 June 2018 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit. Test signal f VDS PL Gp (MHz) (V) (W) (dB) CW 915 50 600 19.8 ηD (%) 68.5 1.2 Features and benefits  High efficiency  Easy power control  Excellent ruggedness  Integrated ESD protection  Designed for broadband operation (900 MHz to 930 MHz)  Internally input matched  For RoHS compliance see the product details on the Ampleon website 1.
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