BLF0910H9LS600
description
A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.
The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.
Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 m A in a class-AB application circuit.
Test signal f
Gp
(MHz)
(V) (W) (d B)
CW 915 50 600 19.8
ηD (%) 68.5
1.2 Features and benefits
- High efficiency
- Easy power control
- Excellent ruggedness
- Integrated ESD protection
- Designed for broadband operation (900 MHz to 930 MHz)
- Internally input matched
- For Ro HS pliance see the product details on the Ampleon website
1.3 Applications
- Industrial applications in the 915 MHz ISM band
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description drain gate source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1] 3 2
2 3 sym112
Table 3. Ordering...
