• Part: BLF10M6LS135
  • Description: Power LDMOS transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 350.77 KB
Download BLF10M6LS135 Datasheet PDF
Ampleon
BLF10M6LS135
description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f PL(AV) Gp D (MHz) (V) (W) (d B) (%) 2-carrier W-CDMA 869 to 894 28 26.5 21.0 28.0 ACPR (d Bc) - 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.2 Features and benefits - Easy power control - Integrated ESD protection - Enhanced ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (700 MHz to 1000 MHz) - Internally matched for ease of use - pliant to Directive 2002/95/EC, regarding restriction of hazardous substances (Ro HS) 1.3 Applications - RF power...