BLF10M6LS135 Overview
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 26.5 21.0 28.0 ACPR (dBc) 39[1] [1] Test signal:.
BLF10M6LS135 Key Features
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (700 MHz to 1000 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding restriction of hazardous substances
