Download the BLF2425M9LS30 datasheet PDF.
This datasheet also covers the BLF2425M9L30 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package.
Table 1.
Key Features
High efficiency.
High power gain.
Excellent ruggedness.
Excellent thermal stability.
Integrated ESD protection.
Designed for broadband operation (2400 MHz to 2500 MHz).
For RoHS compliance see the product details on the Ampleon website
1.3.
Full PDF Text Transcription for BLF2425M9LS30 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BLF2425M9LS30. For precise diagrams, and layout, please refer to the original PDF.
BLF2425M9L30; BLF2425M9LS30 Power LDMOS transistor Rev. 5 — 13 June 2019 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for Ind...
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ct profile 1.1 General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 32 30 18.5 D (%) 61 1.
BLF2425M9LS30 Datasheet
