Datasheet4U Logo Datasheet4U.com

BLF2425M9LS30 - Power LDMOS transistor

This page provides the datasheet information for the BLF2425M9LS30, a member of the BLF2425M9L30 Power LDMOS transistor family.

Datasheet Summary

Description

30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package.

Table 1.

Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • For RoHS compliance see the product details on the Ampleon website 1.3.

📥 Download Datasheet

Datasheet preview – BLF2425M9LS30

Datasheet Details

Part number BLF2425M9LS30
Manufacturer Ampleon
File Size 1.04 MB
Description Power LDMOS transistor
Datasheet download datasheet BLF2425M9LS30 Datasheet
Additional preview pages of the BLF2425M9LS30 datasheet.

📁 Similar Datasheet

Other Datasheets by Ampleon

Full PDF Text Transcription

Click to expand full text
BLF2425M9L30; BLF2425M9LS30 Power LDMOS transistor Rev. 5 — 13 June 2019 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 32 30 18.5 D (%) 61 1.
Published: |