BLF573S
description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
Table 1. Production test information
Mode of operation f
Gp
D
(MHz)
(V)
(W)
(d B)
(%)
225 50
300 27.2 70
CAUTION
This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
- Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 m A:
- Average output power = 300 W
- Power gain = 27.2 d B
- Efficiency = 70 %
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF and VHF band)
- pliant to Directive 2002/95/EC, regarding Restriction of...
