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BLF6G20S-45 - Power LDMOS transistor

Download the BLF6G20S-45 datasheet PDF. This datasheet also covers the BLF6G20-45 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 360 mA:.
  • Average output power = 2.5 W.
  • Power gain = 19.2 dB (typ).
  • Efficiency = 14 %.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF6G20-45-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF6G20S-45
Manufacturer Ampleon
File Size 358.84 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G20S-45 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 1805 to 1880 28 2.5 19.2 14 ACPR (dBc) 50[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.