BLF6G21-10G
description
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz
Table 1. Typical performance
IDq = 100 m A; Tcase = 25 C in a mon source class-AB production test circuit.
Mode of operation f
PL(AV)
Gp
D
(MHz)
(V)
(W)
(d B)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7 18.5 15
1-carrier W-CDMA 2110 to 2170 28
19.3 31
ACPR (d Bc)
- 50[1]
- 39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION
This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
- Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 m A:
- Average output power = 0.7 W
- Gain = 18.5 d B
-...
