BLF6G22L-40BN Datasheet | Ampleon

Power LDMOS transistor Rev. 2 - 1 September 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Mode of operation f PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 2.5 19 16 ACPR (dBc) - 50[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be...