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BLF6G27L-50BN - Power LDMOS transistor

Datasheet Summary

Description

50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (2500 MHz to 2700 MHz).
  • Internally matched for ease of use.
  • Integrated current sense.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applicat.

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Datasheet Details

Part number BLF6G27L-50BN
Manufacturer Ampleon
File Size 362.05 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G27L-50BN Datasheet
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Full PDF Text Transcription

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BLF6G27L-50BN Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) 2-carrier W-CDMA 2500 to 2700 430 28 3 16.5 14.5 ACPR (dBc) 47 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz 1.
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