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BLF6G27LS-40P - Power LDMOS transistor

This page provides the datasheet information for the BLF6G27LS-40P, a member of the BLF6G27L-40P Power LDMOS transistor family.

Datasheet Summary

Description

40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficien.

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Datasheet preview – BLF6G27LS-40P

Datasheet Details

Part number BLF6G27LS-40P
Manufacturer Ampleon
File Size 418.87 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G27LS-40P Datasheet
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Full PDF Text Transcription

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BLF6G27L-40P; BLF6G27LS-40P(G) Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2500 to 2700 450 28 12 17.5 30 46 [1] - Single carrier W-CDMA 2500 to 2700 450 28 20 17.5 37 - 35 [2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF.
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