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BLF6G38LS-50 - Power LDMOS transistor

This page provides the datasheet information for the BLF6G38LS-50, a member of the BLF6G38-50 Power LDMOS transistor family.

Datasheet Summary

Description

50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

  • Typical 1-carrier N-CDMA performance (Single c.

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Datasheet Details

Part number BLF6G38LS-50
Manufacturer Ampleon
File Size 385.53 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G38LS-50 Datasheet
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Full PDF Text Transcription

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BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f (MHz) VDS (V) PL(AV) (W) PL(M)[1] (W) Gp (dB) D (%) ACPR885k (dBc) ACPR1980k (dBc) 1-carrier N-CDMA[2] 3400 to 3600 28 9 70 14 23 49[3] 64[3] [1] PL(M) stands for peak output power. [2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. [3] Measured within 30 kHz bandwidth.
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