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BLF6G38S-25 - Power LDMOS transistor

This page provides the datasheet information for the BLF6G38S-25, a member of the BLF6G38-25 Power LDMOS transistor family.

Datasheet Summary

Description

25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

  • Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400.

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Datasheet preview – BLF6G38S-25

Datasheet Details

Part number BLF6G38S-25
Manufacturer Ampleon
File Size 400.41 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G38S-25 Datasheet
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Full PDF Text Transcription

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BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR885k ACPR1980k (MHz) (V) (W) (dB) (%) (dBc) (dBc) 1-carrier N-CDMA[1] 3400 to 3600 28 4.5 15 24 45[2] 61[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] Measured within 30 kHz bandwidth. 1.
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