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BLF6H10LS-160 - Power LDMOS transistor

This page provides the datasheet information for the BLF6H10LS-160, a member of the BLF6H10L-160 Power LDMOS transistor family.

Datasheet Summary

Description

A 160 W LDMOS RF power transistor for base station applications.

The transistor can deliver 160 W from 729 MHz to 960 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.

Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High power gain.
  • High efficiency.
  • Excellent reliability.
  • Easy power control.
  • Low Rth providing excellent thermal stability.
  • Low output capacitance for wideband performance in Doherty applicati.

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Datasheet preview – BLF6H10LS-160

Datasheet Details

Part number BLF6H10LS-160
Manufacturer Ampleon
File Size 367.22 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6H10LS-160 Datasheet
Additional preview pages of the BLF6H10LS-160 datasheet.

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Full PDF Text Transcription

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BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications. Table 1. Typical performance RF performance at VDS = 50 V in a common-source Class-AB test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) 2-carrier W-CDMA 960 600 50 38 20 D (%) 34 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF. ACPR (dBc) 32[1] 1.
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