BLF6H10LS-160 Description
A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.
BLF6H10LS-160 Key Features
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Low Rth providing excellent thermal stability
- Low output capacitance for wideband performance in Doherty applicati
BLF6H10LS-160 Applications
- Integrated ESD protection