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BLF7G10LS-250 - Power LDMOS transistor

This page provides the datasheet information for the BLF7G10LS-250, a member of the BLF7G10L-250 Power LDMOS transistor family.

Datasheet Summary

Description

250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz.

Table 1.

Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation (869 MHz to 960 MHz).
  • Lower output capacitance for impro.

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Datasheet preview – BLF7G10LS-250

Datasheet Details

Part number BLF7G10LS-250
Manufacturer Ampleon
File Size 403.59 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G10LS-250 Datasheet
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Full PDF Text Transcription

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BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 6 — 7 November 2016 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz. Typical RF performance at Tcase = 25 C. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 [1] 1800 30 60 19.5 27.4 35.6 2-carrier W-CDMA 920 to 960 [2] 1800 30 60 19.5 30.5 34 [1] In a common source class-AB application test circuit. [2] In a common source class-AB production test circuit. 1.
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