BLF7G20L-200 Overview
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF.
BLF7G20L-200 Key Features
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation (1805 MHz to 1990 MHz)
- Lower output capacitance for improved performance in Doherty
