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BLF7G20L-90P - Power LDMOS transistor

Datasheet Summary

Description

90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz.

Table 1.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF7G20L-90P
Manufacturer Ampleon
File Size 413.76 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G20L-90P Datasheet
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BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR400k (MHz) (mA) (V) (W) (dB) (%) (dBc) CW 1805 to 1880 550 28 84 19 54 - GSM EDGE 1805 to 1880 550 28 40 19.5 41 61 ACPR600k (dBc) 74 EVMrms (%) 2.5 1.
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