BLF7G20LS-200
description
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Mode of operation f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(m A) (V) (W)
(d B) (%) (d Bc)
2-carrier W-CDMA
1805 to 1880
1620 28 55
18 33
- 29 [1]
[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 d B at 0.01 % probability on CCDF.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation (1805 MHz to 1990 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low-memory effects providing excellent digital pre-distortion capability
- Internally matched for ease...
