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BLF7G20LS-200 - Power LDMOS transistor

Download the BLF7G20LS-200 datasheet PDF. This datasheet also covers the BLF7G20L-200 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (1805 MHz to 1990 MHz).
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF7G20L-200-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF7G20LS-200
Manufacturer Ampleon
File Size 382.82 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G20LS-200 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1620 28 55 18 33 29 [1] [1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 1.