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BLF7G20LS-200 - Power LDMOS transistor

This page provides the datasheet information for the BLF7G20LS-200, a member of the BLF7G20L-200 Power LDMOS transistor family.

Datasheet Summary

Description

200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (1805 MHz to 1990 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF7G20LS-200
Manufacturer Ampleon
File Size 382.82 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G20LS-200 Datasheet
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BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1620 28 55 18 33 29 [1] [1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 1.
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