BLF7G22L-200 Description
200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF;.
BLF7G22L-200 Key Features
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances