BLF7G22L-200
description
200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Mode of operation f
IDq
VDS PL(AV) Gp
D
ACPR
(MHz)
(m A) (V) (W)
(d B) (%)
(d Bc)
2-carrier W-CDMA
2110 to 2170 1620 28 55
18.5 31
- 31[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 d B at 0.01 % probability on CCDF; carrier spacing 5 MHz.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro...
