Datasheet Details
| Part number | BLF7G22L-200 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 409.14 KB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLF7G22L-200 Datasheet
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General Description
200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Key Features
- Excellent ruggedness.
- High efficiency.
- Low Rth providing excellent thermal stability.
- Designed for low memory effects providing excellent pre-distortability.
- Internally matched for ease of use.
- Integrated ESD protection.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.