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BLF7G27LS-140 - Power LDMOS transistor

This page provides the datasheet information for the BLF7G27LS-140, a member of the BLF7G27L-140 Power LDMOS transistor family.

Description

140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stabil.

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Datasheet Details

Part number BLF7G27LS-140
Manufacturer Ampleon
File Size 404.80 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G27LS-140 Datasheet
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BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2500 to 2700 1300 28 30 16.5 22 48[1] - Single carrier W-CDMA 2500 to 2700 1300 28 50 16.5 27 - 38[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
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