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BLL6H0514L-130 - LDMOS driver transistor

General Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Table 1.

Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (0.5 GHz to 1.4 GHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLL6H0514L-130
Manufacturer Ampleon
File Size 322.80 KB
Description LDMOS driver transistor
Datasheet download datasheet BLL6H0514L-130 Datasheet

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BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp  VDS PL Gp RLin D (MHz) (s) (%) (V) (W) (dB) (dB) (%) pulsed RF 960 to 1215 128 10 50 130 19 10 54 1200 to 1400 300 10 50 130 17 10 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8 1.