• Part: BLL8H1214L-250
  • Description: LDMOS L-band radar power transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 341.41 KB
Download BLL8H1214L-250 Datasheet PDF
Ampleon
BLL8H1214L-250
BLL8H1214L-250 is LDMOS L-band radar power transistor manufactured by Ampleon.
description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 m A; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (d B) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 17 55 1.2 Features and benefits - Easy power control - Integrated dual side ESD protection - High flexibility with respect to pulse formats - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (1.2 GHz to 1.4 GHz) - Internally matched for ease of use - pliant to Directive 2002/95/EC, regarding restriction of hazardous substances (Ro HS) 1.3 Applications - L-band power amplifiers for radar...