BLL8H1214L-250 Datasheet Ldmos L-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLL8H1214L-250; BLL8H1214LS-250 LDMOS L-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.

Datasheet Details

Part number	BLL8H1214L-250
Manufacturer	Ampleon
File Size	341.41 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL8H1214L-250-Ampleon.pdf

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C;

Easy power control.
Integrated dual side ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLL8H1214L-250	LDMOS L-band radar power transistor	NXP

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