BLL9G1214L-600 Datasheet PDF - Ampleon LDMOS L-band radar power transistor Specs

BLL9G1214L-600 - LDMOS L-band radar power transistor

Datasheet Summary

Description

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit.

Features

High efficiency.
Excellent ruggedness.
Designed for L-band operation.
Excellent thermal stability.
Easy power control.
Integrated dual sided ESD protection enables excellent off-state isolation.
High flexibility with respect to pulse formats.
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Datasheet Details

Part number	BLL9G1214L-600
Manufacturer	Ampleon
File Size	485.01 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL9G1214L-600 Datasheet
Additional preview pages of the BLL9G1214L-600 datasheet.

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Full PDF Text Transcription

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BLL9G1214L-600; BLL9G1214LS-600 LDMOS L-band radar power transistor Rev. 1 — 27 November 2017 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(3dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 1.2 to 1.4 32 600 19 60 1.

Published: Apr 26, 2018 |