Datasheet Details
| Part number | BLL9G1214LS-600 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 485.01 KB |
| Description | LDMOS L-band radar power transistor |
| Datasheet |
 BLL9G1214LS-600 Datasheet
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General Description
600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo test circuit.
Key Features
- High efficiency.
- Excellent ruggedness.
- Designed for L-band operation.
- Excellent thermal stability.
- Easy power control.
- Integrated dual sided ESD protection enables excellent off-state isolation.
- High flexibility with respect to pulse formats.
- Internally matched for ease of use.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.