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BLL9G1214LS-600 Datasheet

Manufacturer: Ampleon
BLL9G1214LS-600 datasheet preview

BLL9G1214LS-600 Details

Part number BLL9G1214LS-600
Datasheet BLL9G1214LS-600 BLL9G1214L-600 Datasheet (PDF)
File Size 485.01 KB
Manufacturer Ampleon
Description LDMOS L-band radar power transistor
BLL9G1214LS-600 page 2 BLL9G1214LS-600 page 3

BLL9G1214LS-600 Overview

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB demo test circuit.

BLL9G1214LS-600 Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for L-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

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