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BLL9G1214LS-600 - LDMOS L-band radar power transistor

This page provides the datasheet information for the BLL9G1214LS-600, a member of the BLL9G1214L-600 LDMOS L-band radar power transistor family.

Datasheet Summary

Description

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for L-band operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLL9G1214LS-600

Datasheet Details

Part number BLL9G1214LS-600
Manufacturer Ampleon
File Size 485.01 KB
Description LDMOS L-band radar power transistor
Datasheet download datasheet BLL9G1214LS-600 Datasheet
Additional preview pages of the BLL9G1214LS-600 datasheet.

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Full PDF Text Transcription

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BLL9G1214L-600; BLL9G1214LS-600 LDMOS L-band radar power transistor Rev. 1 — 27 November 2017 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(3dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 1.2 to 1.4 32 600 19 60 1.
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