BLP05H6110XR Description
A 110 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 110 Gp (dB) 27 D (%) 75 1.2.
BLP05H6110XR Key Features
- Easy power control
- Integrated double sided ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 600 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances