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BLP05H9S500P - Power LDMOS transistor

Description

500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting and defrosting at frequencies from 423 MHz to 443 MHz.

Table 1.

Typical performance RF performance at VDS = 50 V; IDq = 50 mA in a class-AB application circuit.

Features

  • High efficiency.
  • Easy power control.
  • Excellent ruggedness.
  • Integrated ESD protection.
  • Designed for ISM operation (423 MHz to 443 MHz).
  • Excellent thermal stability.
  • For RoHS compliance see the product details on the Ampleon website 1.3.

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Datasheet Details

Part number BLP05H9S500P
Manufacturer Ampleon
File Size 1.51 MB
Description Power LDMOS transistor
Datasheet download datasheet BLP05H9S500P Datasheet
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BLP05H9S500P Power LDMOS transistor Rev. 1 — 10 September 2019 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting and defrosting at frequencies from 423 MHz to 443 MHz. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 50 mA in a class-AB application circuit. Test signal f VDS PL Gp (MHz) (V) (W) (dB) CW 433 50 500 25.3 CW pulsed [1] 433 50 500 25.6 [1] tp = 100 s;  = 10 %. D (%) 75 75.8 1.2 Features and benefits  High efficiency  Easy power control  Excellent ruggedness  Integrated ESD protection  Designed for ISM operation (423 MHz to 443 MHz)  Excellent thermal stability  For RoHS compliance see the product details on the Ampleon website 1.
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