Datasheet4U Logo Datasheet4U.com

BLP05M7200 - Power LDMOS transistor

Description

200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz.

Table 1.

RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Easy power control.
  • Designed for ISM operation (425 MHz to 450 MHz).
  • Input integration for simple board design.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Datasheet preview – BLP05M7200

Datasheet Details

Part number BLP05M7200
Manufacturer Ampleon
File Size 296.21 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP05M7200 Datasheet
Additional preview pages of the BLP05M7200 datasheet.

📁 Similar Datasheet

Other Datasheets by Ampleon

Full PDF Text Transcription

Click to expand full text
BLP05M7200 Power LDMOS transistor Rev. 5 — 27 June 2017 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. Table 1. Typical performance RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit. Test signal f VDS PL(AV) (MHz) (V) (W) CW 440 28 210 Gp (dB) 21 D (%) 81 1.2 Features and benefits  High efficiency  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Easy power control  Designed for ISM operation (425 MHz to 450 MHz)  Input integration for simple board design  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
Published: |