BLP05M7200
description
200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C, IDq = 2 m A in an application circuit.
Test signal f
PL(AV)
(MHz)
(V) (W)
CW 440 28 210
Gp (d B) 21
D (%) 81
1.2 Features and benefits
- High efficiency
- Excellent ruggedness
- Excellent thermal stability
- Integrated ESD protection
- Easy power control
- Designed for ISM operation (425 MHz to 450 MHz)
- Input integration for simple board design
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- RF power amplifiers for CW applications in the 425 MHz to 450 MHz frequency range such as ISM and RF plasma lighting.
Power LDMOS transistor
2. Pinning information
Table 2....
