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BLP10H6120PG - Power LDMOS transistor

This page provides the datasheet information for the BLP10H6120PG, a member of the BLP10H6120P Power LDMOS transistor family.

Datasheet Summary

Description

A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.

Table 1.

Features

  • Easy power control.
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 1000 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLP10H6120PG

Datasheet Details

Part number BLP10H6120PG
Manufacturer Ampleon
File Size 1.00 MB
Description Power LDMOS transistor
Datasheet download datasheet BLP10H6120PG Datasheet
Additional preview pages of the BLP10H6120PG datasheet.

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Full PDF Text Transcription

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BLP10H6120P; BLP10H6120PG Power LDMOS transistor Rev. 1 — 20 December 2016 Product data sheet 1. Product profile 1.1 General description A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 720 pulsed RF 915 CW 915 VDS PL (V) (W) 50 120 50 160 50 143 Gp (dB) 18 14.9 15.1 D (%) 72 70.2 62.3 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1000 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
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