BLP10H630P
description
A 30 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.
Table 1. Application information
Test signal f
(MHz) pulsed RF
(V) (W)
50 30
Gp (d B) 18
D (%) 72
1.2 Features and benefits
- Easy power control
- Integrated dual sided ESD protection enables class C operation and plete switch off of the transistor
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 1000 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
- Broadcast transmitter applications
BLP10H630P; BLP10H630PG
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLP10H630P (SOT1223-2) 1 gate 2 2...
