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BLP15M7160P - Power LDMOS transistor

General Description

A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1500 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Key Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High power gain.
  • High efficiency.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLP15M7160P
Manufacturer Ampleon
File Size 334.08 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP15M7160P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLP15M7160P Power LDMOS transistor Rev. 5 — 8 January 2016 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Test signal f VDS IDq PL(AV) (MHz) (V) (mA) (W) pulsed, class-B 860 28 100 - PL(M) (W) 160 Gp (dB) 20 D (%) 62 1.