Datasheet4U Logo Datasheet4U.com

BLP5LA55SG - Power LDMOS transistor

Description

This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz.

Table 1.

Application performance Typical RF performance at Tcase = 25 C; in a class-AB demo circuit.

Features

  • High efficiency.
  • Integrated dual sided ESD protection.
  • Extreme ruggedness 65 : 1.
  • High power gain.
  • Excellent reliability.
  • Wideband.
  • High linearity.
  • For RoHS compliance see the product details on the Ampleon website 1.3.

📥 Download Datasheet

Datasheet preview – BLP5LA55SG

Datasheet Details

Part number BLP5LA55SG
Manufacturer Ampleon
File Size 1.89 MB
Description Power LDMOS transistor
Datasheet download datasheet BLP5LA55SG Datasheet
Additional preview pages of the BLP5LA55SG datasheet.

📁 Similar Datasheet

Other Datasheets by Ampleon

Full PDF Text Transcription

Click to expand full text
BLP5LA55SG Power LDMOS transistor Rev. 1 — 7 April 2023 Product data sheet 1. Product profile 1.1 General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; in a class-AB demo circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 145 to 165 893 15.0 63 >23.0 380 to 450 80 13.6 55 >20.4 520 100 13.6 55 19.6 D (%) >66.4 >62.3 75.0 RLin (dB) 7.8 6.3 15.3 1.
Published: |