• Part: BLP7G07S-140P
  • Description: Power LDMOS transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 339.82 KB
Download BLP7G07S-140P Datasheet PDF
Ampleon
BLP7G07S-140P
description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal f (MHz) 2-carrier W-CDMA 724 to 769 790 to 821 VDS PL(AV) (V) (W) 28 35 28 35 Gp (d B) 20.9 20.2 D (%) 29.6 29.0 ACPR5M (d Bc) - 36.3 [1] - 35.5 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.2 Features and benefits - Integrated ESD protection - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (700 MHz to 1000 MHz) - Internally matched for ease of use - pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) 1.3 Applications - RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to...