BLP7G07S-140P - Power LDMOS transistor

Datasheet Summary

Description

140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Features

Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (700 MHz to 1000 MHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Ampleon

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Datasheet Details

Part number	BLP7G07S-140P
Manufacturer	Ampleon
File Size	339.82 KB
Description	Power LDMOS transistor
Datasheet	BLP7G07S-140P Datasheet
Additional preview pages of the BLP7G07S-140P datasheet.

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Full PDF Text Transcription

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BLP7G07S-140P Power LDMOS transistor Rev. 5 — 8 January 2016 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal f (MHz) 2-carrier W-CDMA 724 to 769 790 to 821 VDS PL(AV) (V) (W) 28 35 28 35 Gp (dB) 20.9 20.2 D (%) 29.6 29.0 ACPR5M (dBc) 36.3 [1] 35.5 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.

Published: Apr 27, 2018 |