BLP7G22-05
description
A 5 W plastic LDMOS power transistor for base station applications from 700 MHz to 2700 MHz band.
Table 1. Application information
Typical RF performance at Tcase = 25 C; in a class-AB application circuit.
Test signal f
IDq
PL(AV)
Gp
(MHz) (m A) (V) (W)
(d B)
IS-95 [1]
788 60 28 1
2-carrier W-CDMA [2]
28 1
Pulsed CW
28 5
D (%) 25 27 45
ACPR (d Bc)
- 41
- 40
- [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8
- 13). PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Test signal: 2-carrier W-CDMA: carrier spacing = 5 MHz. PAR = 8.4 d B at 0.01% probability on CCDF; RF performance at VDS = 28 V; IDq = 55 m A.
1.2 Features and benefits
- High efficiency
- Excellent ruggedness
- Designed for broadband operation
-...
