BLP7G22-10
description
10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies)
Typical RF performance at Tcase = 25 C; IDq = 110 m A; in a class-AB application circuit.
Test signal f
IDq
VDS PL(AV)
Gp
D
ACPR5M
(MHz) (m A) (V) (W)
(d B) (%) (d Bc)
Pulsed CW
2700 110 28 2
14.5 26
- 1-carrier W-CDMA
748 110 28 0.7 27.5 13.5
- 43 [1]
748 110 28 2
27.5 25
- 40
2-carrier W-CDMA
2140 110 28 0.7
17.4 13
- 51
2140 110 28 2
17.4 25
- 40
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 d B at 0.01 % probability on CCDF; RF performance at VDS = 28 V; IDq = 110 m A.
1.2 Features and benefits
- High efficiency
- Excellent ruggedness
- Designed for broadband operation
- Excellent thermal stability
- High power gain
-...
