BLP8G05S-200G Overview
200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz. Typical performance RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit. Test signal f VDS PL(AV) (MHz) (V) (W) CW 440 28 210 Gp (dB) 21 D (%) 81 1.2.
BLP8G05S-200G Key Features
- High efficiency
- Excellent ruggedness
- Excellent thermal stability
- Integrated ESD protection
- Easy power control
- Designed for ISM operation (400 MHz to 500 MHz)
- Input integration for simple board design
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances