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BLP8G05S-200G - Power LDMOS transistor

This page provides the datasheet information for the BLP8G05S-200G, a member of the BLP8G05S-200 Power LDMOS transistor family.

Description

200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.

Table 1.

RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Easy power control.
  • Designed for ISM operation (400 MHz to 500 MHz).
  • Input integration for simple board design.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLP8G05S-200G
Manufacturer Ampleon
File Size 350.84 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP8G05S-200G Datasheet
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BLP8G05S-200; BLP8G05S-200G Power LDMOS transistor Rev. 2 — 1 October 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit. Test signal f VDS PL(AV) (MHz) (V) (W) CW 440 28 210 Gp (dB) 21 D (%) 81 1.2 Features and benefits  High efficiency  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Easy power control  Designed for ISM operation (400 MHz to 500 MHz)  Input integration for simple board design  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
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