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BLP8G05S-200G Datasheet Power LDMOS transistor

Manufacturer: Ampleon

Download the BLP8G05S-200G datasheet PDF. This datasheet also includes the BLP8G05S-200 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BLP8G05S-200-Ampleon.pdf) that lists specifications for multiple related part numbers.

General Description

200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit.

Overview

BLP8G05S-200; BLP8G05S-200G Power LDMOS transistor Rev.

2 — 1 October 2015 Product data sheet 1.

Product profile 1.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Easy power control.
  • Designed for ISM operation (400 MHz to 500 MHz).
  • Input integration for simple board design.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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