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BLP8G20S-80P - Power LDMOS transistor

Description

80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board.

Features

  • Designed for broadband operation (1800 MHz to 2200 MHz).
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Internally matched for ease of use.
  • High power gain.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of.

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Datasheet Details

Part number BLP8G20S-80P
Manufacturer Ampleon
File Size 342.62 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP8G20S-80P Datasheet
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BLP8G20S-80P Power LDMOS transistor Rev. 4 — 6 April 2016 Product data sheet 1. Product profile 1.1 General description 80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 300 28 14.2 17 47 30 [1] 1880 to 1920 300 28 14.2 16.8 46 30 [1] 2110 to 2170 300 28 14.2 16 43 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz. 1.
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