BLP8G20S-80P Overview
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz. Typical performance Typical RF performance per section at Tcase = 25 C in a mon Doherty demo board. PAR = 8.4 dB at 0.01 % probability on CCDF;.
BLP8G20S-80P Key Features
- Designed for broadband operation (1800 MHz to 2200 MHz)
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Internally matched for ease of use
- High power gain
- Integrated ESD protection
BLP8G20S-80P Applications
- Designed for broadband operation (1800 MHz to 2200 MHz)
