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BLP8G27-10 - Power LDMOS transistor

Description

10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • High power gain.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLP8G27-10
Manufacturer Ampleon
File Size 403.07 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP8G27-10 Datasheet
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Full PDF Text Transcription

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BLP8G27-10 Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (dBm) (dB) (%) (dBc) Pulsed CW 2700 110 28 33 17 19 - 2-carrier W-CDMA [1] 2700 110 28 33 17 22 47.3 [1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01 % probability on CCDF. 1.
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