BLS6G2731-120 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.

Datasheet Details

Part number	BLS6G2731-120
Manufacturer	Ampleon
File Size	369.38 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS6G2731-120-Ampleon.pdf

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:.
Output power = 120 W.
Power gain = 13.5 dB.
Efficiency = 48 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse.

Brand Logo	Part Number	Description	Other Manufacturers
	BLS6G2731-120	LDMOS S-band Radar Power Transistor	NXP

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