Datasheet4U.com

BLS6G2731-120 - LDMOS S-band radar power transistor

Product Overview

Ampleon

📥 Download Datasheet

BLS6G2731-120 LDMOS S-band radar power transistor by Ampleon - Datasheet Preview — Datasheet preview – BLS6G2731-120

Datasheet Details

Part number	BLS6G2731-120
Manufacturer	Ampleon
File Size	369.38 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS6G2731-120 Datasheet
Additional preview pages of the BLS6G2731-120 datasheet.

Product details

Description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Features

Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:.
Output power = 120 W.
Power gain = 13.5 dB.
Efficiency = 48 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse.

📁 Similar Datasheet

BLS6G2731-120 - LDMOS S-band Radar Power Transistor (NXP)
BLS6G2731-6G - LDMOS S-Band radar power transistor (NXP Semiconductors)
BLS6G2731S-120 - LDMOS S-band Radar Power Transistor (NXP)
BLS6G2731S-130 - LDMOS S-band radar power transistor (NXP)
BLS6G2735L-30 - S-band LDMOS transistor (NXP)
BLS6G2735LS-30 - S-band LDMOS transistor (NXP)
BLS6G2933P-200 - LDMOS S-Band radar pallet amplifier (NXP)
BLS6G2933S-130 - LDMOS S-band radar power transistor (NXP Semiconductors)

Other Datasheets by Ampleon

BLS6G2731-6G - LDMOS S-Band radar power transistor
BLS6G2731S-120 - LDMOS S-band radar power transistor
BLS6G2735L-30 - S-band LDMOS transistor
BLS6G2735LS-30 - S-band LDMOS transistor
BLS6G2933S-130 - LDMOS S-band radar power transistor
BLS6G3135-120 - LDMOS S-Band radar power transistor

Published: Apr 26, 2018 |