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BLS6G2731-120 - LDMOS S-band radar power transistor

Description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:.
  • Output power = 120 W.
  • Power gain = 13.5 dB.
  • Efficiency = 48 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse.

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Datasheet Details

Part number BLS6G2731-120
Manufacturer Ampleon
File Size 369.38 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS6G2731-120 Datasheet
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BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 3.1 32 120 13.5 48 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical pulsed RF performance at a frequency of 2.7 GHz to 3.
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