Datasheet4U Logo Datasheet4U.com

BLS6G2735LS-30 - S-band LDMOS transistor

This page provides the datasheet information for the BLS6G2735LS-30, a member of the BLS6G2735L-30 S-band LDMOS transistor family.

Description

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

Table 1.

Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA.

Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (.

📥 Download Datasheet

Datasheet preview – BLS6G2735LS-30

Datasheet Details

Part number BLS6G2735LS-30
Manufacturer Ampleon
File Size 553.42 KB
Description S-band LDMOS transistor
Datasheet download datasheet BLS6G2735LS-30 Datasheet
Additional preview pages of the BLS6G2735LS-30 datasheet.

📁 Similar Datasheet

Other Datasheets by Ampleon

Full PDF Text Transcription

Click to expand full text
BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) tr (ns) tf (ns) Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz pulsed RF 3.1 to 3.5 32 30 13 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz pulsed RF 2.7 to 3.3 32 35 14 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz pulsed RF 2.7 to 3.
Published: |