Datasheet4U Logo Datasheet4U.com

BLS6G3135-120 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.

Datasheet Details

Part number BLS6G3135-120
Manufacturer Ampleon
File Size 371.09 KB
Description LDMOS S-Band radar power transistor
Datasheet BLS6G3135-120-Ampleon.pdf

General Description

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Key Features

  • Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with  of 10 %:.
  • Output power = 120 W.
  • Gain = 11 dB.
  • Efficiency = 43 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.

BLS6G3135-120 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
NXP Semiconductors Logo BLS6G3135-120 LDMOS S-Band radar power transistor NXP Semiconductors

More Datasheets from Ampleon

Part Number Description
BLS6G3135-20 LDMOS S-Band radar power transistor
BLS6G3135S-120 LDMOS S-Band radar power transistor
BLS6G3135S-20 LDMOS S-Band radar power transistor
BLS6G2731-120 LDMOS S-band radar power transistor
BLS6G2731-6G LDMOS S-Band radar power transistor
BLS6G2731S-120 LDMOS S-band radar power transistor
BLS6G2735L-30 S-band LDMOS transistor
BLS6G2735LS-30 S-band LDMOS transistor
BLS6G2933S-130 LDMOS S-band radar power transistor
BLS7G2325L-105 Power LDMOS transistor

BLS6G3135-120 Distributor