BLS6G3135S-120
description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 m A; in a class-AB production test circuit.
Mode of operation f
VDS PL
Gp D tr tf
(GHz)
(V) (W)
(d B) (%) (ns)
(ns) pulsed RF
3.1 to 3.5 32
11 43
CAUTION
This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
- Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 m A, a tp of up to 300 s with of 10 %:
- Output power = 120 W
- Gain = 11 d B
- Efficiency = 43 %
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High...
