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BLS6G3135S-120 - LDMOS S-Band radar power transistor

This page provides the datasheet information for the BLS6G3135S-120, a member of the BLS6G3135-120 LDMOS S-Band radar power transistor family.

Description

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with  of 10 %:.
  • Output power = 120 W.
  • Gain = 11 dB.
  • Efficiency = 43 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.

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Datasheet Details

Part number BLS6G3135S-120
Manufacturer Ampleon
File Size 371.09 KB
Description LDMOS S-Band radar power transistor
Datasheet download datasheet BLS6G3135S-120 Datasheet
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BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.1 to 3.5 32 120 11 43 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical pulsed RF performance at a frequency of 3.1 GHz to 3.
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