BLS6G3135S-120 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	BLS6G3135S-120
Manufacturer	Ampleon
File Size	371.09 KB
Description	LDMOS S-Band radar power transistor
Datasheet	BLS6G3135S-120 BLS6G3135-120 Datasheet (PDF)

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with  of 10 %:.
Output power = 120 W.
Gain = 11 dB.
Efficiency = 43 %.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.

Brand Logo	Part Number	Description	Other Manufacturers
	BLS6G3135S-120	LDMOS S-Band radar power transistor	NXP Semiconductors

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