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BLS6G3135S-120

Manufacturer: Ampleon

BLS6G3135S-120 datasheet by Ampleon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLS6G3135S-120 datasheet preview

BLS6G3135S-120 Datasheet Details

Part number BLS6G3135S-120
Datasheet BLS6G3135S-120 BLS6G3135-120 Datasheet (PDF)
File Size 371.09 KB
Manufacturer Ampleon
Description LDMOS S-Band radar power transistor
BLS6G3135S-120 page 2 BLS6G3135S-120 page 3

BLS6G3135S-120 Overview

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.

BLS6G3135S-120 Key Features

  • Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of
  • Output power = 120 W
  • Gain = 11 dB
  • Efficiency = 43 %
  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency

BLS6G3135S-120 from other manufacturers

View BLS6G3135S-120 datasheet index

Brand Logo Part Number Description Other Manufacturers
NXP Semiconductors Logo BLS6G3135S-120 LDMOS S-Band radar power transistor NXP Semiconductors
Ampleon logo - Manufacturer

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