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BLS6G3135S-20 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Key Features

  • Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 s and a  of 10 %:.
  • Output power = 20 W.
  • Power gain = 15.5 dB.
  • Efficiency = 45 %.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent.

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