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BLS6G3135S-20

Manufacturer: Ampleon

BLS6G3135S-20 datasheet by Ampleon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLS6G3135S-20 datasheet preview

BLS6G3135S-20 Datasheet Details

Part number BLS6G3135S-20
Datasheet BLS6G3135S-20 BLS6G3135-20 Datasheet (PDF)
File Size 358.05 KB
Manufacturer Ampleon
Description LDMOS S-Band radar power transistor
BLS6G3135S-20 page 2 BLS6G3135S-20 page 3

BLS6G3135S-20 Overview

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.

BLS6G3135S-20 Key Features

  • Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 3
  • Output power = 20 W
  • Power gain = 15.5 dB
  • Efficiency = 45 %
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent

BLS6G3135S-20 from other manufacturers

View BLS6G3135S-20 datasheet index

Brand Logo Part Number Description Other Manufacturers
NXP Semiconductors Logo BLS6G3135S-20 LDMOS S-Band radar power transistor NXP Semiconductors
Ampleon logo - Manufacturer

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