BLS6G3135S-20
description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 m A; in a class-AB production test circuit.
Mode of operation f
Gp
D tr tf
(GHz) (V)
(W)
(d B)
(%)
(ns) (ns)
Pulsed RF
3.1 to 3.5 32 20 15.5 45 20 10
CAUTION
This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
- Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 m A, a tp of 300 s and a of 10 %:
- Output power = 20 W
- Power gain = 15.5 d B
- Efficiency = 45 %
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
-...
