BLS7G2729L-350P Description
350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.
BLS7G2729L-350P Key Features
- High efficiency
- Excellent ruggedness
- Designed for S-band operation (2.7 GHz to 2.9 GHz)
- Excellent thermal stability
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances