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BLS8G2731L-400P - LDMOS S-band radar power transistor

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Ampleon

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BLS8G2731L-400P LDMOS S-band radar power transistor by Ampleon - Datasheet Preview — Datasheet preview – BLS8G2731L-400P

Datasheet Details

Part number	BLS8G2731L-400P
Manufacturer	Ampleon
File Size	363.99 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS8G2731L-400P Datasheet
Additional preview pages of the BLS8G2731L-400P datasheet.

BLS8G2731L-400P Product details

Description

400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit.

Features

High efficiency.
Excellent ruggedness.
Designed for S-band operation.
Excellent thermal stability.
Easy power control.
Integrated dual sided ESD protection enables excellent off-state isolation.
High flexibility with respect to pulse formats.

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Published: Apr 26, 2018 |