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BLS8G2731LS-400P Datasheet

Manufacturer: Ampleon

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLS8G2731LS-400P datasheet preview

Datasheet Details

Part number BLS8G2731LS-400P
Datasheet BLS8G2731LS-400P BLS8G2731L-400P Datasheet (PDF)
File Size 363.99 KB
Manufacturer Ampleon
Description LDMOS S-band radar power transistor
BLS8G2731LS-400P page 2 BLS8G2731LS-400P page 3

BLS8G2731LS-400P Overview

400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB demo test circuit.

BLS8G2731LS-400P Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for S-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats

BLS8G2731LS-400P from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
NXP Logo BLS8G2731LS-400P LDMOS S-band radar power transistor NXP
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BLS8G2731LS-400P Distributor

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