BLS9G2729LS-350 Description
350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz. Test information Typical RF performance at Tcase = 25 C; in a class-AB demo circuit.
BLS9G2729LS-350 Key Features
- High efficiency
- Excellent ruggedness
- Designed for S-band operations
- Excellent thermal stability
- Easy power control
- Integrated dual sided ESD protection enables excellent off-state isolation
- High flexibility with respect to pulse formats
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances