BLS9G2729LS-350 - LDMOS S-band radar power transistor

This page provides the datasheet information for the BLS9G2729LS-350, a member of the BLS9G2729L-350 LDMOS S-band radar power transistor family.

Product Overview

Ampleon

Part number	BLS9G2729LS-350
Manufacturer	Ampleon
File Size	498.17 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS9G2729LS-350 Datasheet
Additional preview pages of the BLS9G2729LS-350 datasheet.

350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit.

High efficiency.
Excellent ruggedness.
Designed for S-band operations.
Excellent thermal stability.
Easy power control.
Integrated dual sided ESD protection enables excellent off-state isolation.
High flexibility with respect to pulse formats.
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Other Datasheets by Ampleon

Published: Apr 26, 2018 |