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BLS9G2731LS-400 - LDMOS S-band radar power transistor

Download the BLS9G2731LS-400 datasheet PDF. This datasheet also covers the BLS9G2731L-400 variant, as both devices belong to the same ldmos s-band radar power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

400 W LDMOS power transistor for S-band applications in the frequency range from 2700 MHz to 3100 MHz.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit measured over the entire 2700 MHz to 3100 MHz frequency range.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band radar.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLS9G2731L-400-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLS9G2731LS-400
Manufacturer Ampleon
File Size 471.46 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS9G2731LS-400 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLS9G2731L-400; BLS9G2731LS-400 LDMOS S-band radar power transistor Rev. 1 — 13 April 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for S-band applications in the frequency range from 2700 MHz to 3100 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit measured over the entire 2700 MHz to 3100 MHz frequency range. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) pulsed RF 2700 to 3100 32 425 13 47 1.