BLS9G2735L-50 - LDMOS S-band radar power transistor

Product Overview

Ampleon

Part number	BLS9G2735L-50
Manufacturer	Ampleon
File Size	399.80 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS9G2735L-50 Datasheet
Additional preview pages of the BLS9G2735L-50 datasheet.

Single ended 50 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB demo test circuit.

Single ended.
Small size.
High efficiency.
Excellent ruggedness.
Designed for S-band operation.
Excellent thermal stability.
Easy power control.
Integrated dual sided ESD protection enables excellent off-state isolation.
High flexibility with respect to pulse formats.
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Apr 26, 2018 |