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BLS9G2735LS-50 Datasheet

Manufacturer: Ampleon
BLS9G2735LS-50 datasheet preview

BLS9G2735LS-50 Details

Part number BLS9G2735LS-50
Datasheet BLS9G2735LS-50 BLS9G2735L-50 Datasheet (PDF)
File Size 399.80 KB
Manufacturer Ampleon
Description LDMOS S-band radar power transistor
BLS9G2735LS-50 page 2 BLS9G2735LS-50 page 3

BLS9G2735LS-50 Overview

Single ended 50 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB demo test circuit.

BLS9G2735LS-50 Key Features

  • Single ended
  • Small size
  • High efficiency
  • Excellent ruggedness
  • Designed for S-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use

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