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BLS9G3135L-400 Datasheet

Ldmos S-band Radar Power Transistor

Manufacturer: Ampleon

Datasheet Details

Part number BLS9G3135L-400
Manufacturer Ampleon
File Size 566.37 KB
Description LDMOS S-band radar power transistor
Datasheet BLS9G3135L-400-Ampleon.pdf

BLS9G3135L-400 Overview

400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB demo circuit.

BLS9G3135L-400 Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for S-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLS9G3135L-400 Distributor